• Part: D1028
  • Description: METAL GATE RF SILICON FET
  • Manufacturer: Seme LAB
  • Size: 126.22 KB
Download D1028 Datasheet PDF
Seme LAB
D1028
FEATURES - SIMPLIFIED AMPLIFIER DESIGN E (4 pls) F I - SUITABLE FOR BROAD BAND APPLICATIONS DRAIN 1 GATE 2 PIN 1 PIN 3 PIN 5 SOURCE (MON) DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N O P Millimetres 19.05 10.77 45° 9.78 5.71 27.94 1.52R 10.16 22.22 0.13 2.72 1.70 5.08 34.03 1.57R Tol. 0.50 0.13 5° 0.13 0.13 0.13 0.13 0.13 MAX 0.02 0.13 0.13 0.50 0.13 0.08 PIN 2 PIN 4 - LOW Crss - SIMPLE BIAS CIRCUITS Inches 0.75 0.424 45° 0.385 0.225 1.100 0.060R 0.400 0.875 0.005 0.107 0.067 0.200 1.340 0.062R Tol. 0.020 0.005 5° 0.005 0.005 0.005 0.005 0.005 MAX 0.001 0.005 0.005 0.020 0.005 0.003 - LOW NOISE - HIGH GAIN - 13 d B MINIMUM APPLICATIONS - VHF/UHF MUNICATIONS from 1 MHz to 200 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 438W 70V ±20V 30A - 65 to 150°C...