D1029UK Datasheet PDF

MECHANICAL DATA

C (2 pls) 1 HD B 2 3 5 4 E (4 pls) F I G (typ) P (2 pls) A PIN 1 PIN 3 PIN 5 NM O DR SOURCE (COMMON) DRAIN 2 GATE 1 JK PIN 2 PIN 4 DRAIN 1 GATE 2 DIM Millimetres Tol. A 19.05 0.50 B 10.77 0.13 C 45° 5° D 9.78 0.13 E 5.71 0.13 F 27.94 0.13 G 1.52R 0.13 H 10.16 0.13 I 22.22 MAX J 0.13 0.02 K 2.72 0.13 M 1.70 0.13 N 5.08 0.50 O 34.03 0.13 P 1.61R 0.08 Inches 0.75 0.424 45° 0.385 0.225 1.100 0.060R 0.400 0.875 0.005 0.107 0.067 0.200 1.340 0.064R Tol. 0.020 0.005 5° 0.005 0.005 0.005 0.005 0.005 MAX 0.001 0.005 0.005 0.020 0.005 0.003 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 350W – 28V – 175MHz PUSH–PULL

FEATURES

● SIMPLIFIED AMPLIFIER DESIGN
● SUITABLE FOR BROAD BAND

APPLICATIONS

● LOW Crss
● SIMPLE BIAS CIRCUITS
● LOW NOISE
● HIGH GAIN – 13 dB MINIMUM

APPLICATIONS

● VHF/UHF COMMUNICATIONS from 1 MHz to 200 MHz

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25°C unless otherwise stated) PD Power Dissipation 438W BVDSS Drain – Source Breakdown Voltage * 70V BVGSS Gate – Source...