Seme LAB D1031UK
METAL GATE RF SILICON FET
MECHANICAL DATA
Dimensions in mm. GOLD METALLISED MULTI-PURPOSE SILICON 2 PL. 0.47 1.65 2 PL. 4 3 3.00 2 PL. 2.07 2 PL. 0.381 2 1 0.47 2 PL. 0.10 TYP. 5.50 ± 0.15 1.27 ± 0.05 2 PL. 0.80 4 PL. 4.90 ± 0.15 0.3 R. 4 PL. 5 1.27 6 1.27 7 1.27 8 0.10 R. TYP. 6.50 ± 0.15 0.10 TYP. 2.313 ± 0.2 0.360 ± 0.005 DMOS RF FET 10W – 28V – 500MHz SINGLE ENDEDFEATURES
0.508● SIMPLIFIED AMPLIFIER DESIGN
● SUITABLE FOR BROAD BAND
APPLICATIONS
F-0127 PACKAGE PIN 1 – SOURCE PIN 2 – DRAIN PIN 3 – DRAIN PIN 4 – SOURCE PIN 5 – SOURCE PIN 6 – GATE PIN 7 – GATE PIN 8 – SOURCE● VERY LOW Crss
● SIMPLE BIAS CIRCUITS
● LOW NOISE
● HIGH GAIN – 13 dB MINIMUM Ceramic Material: Alumina.
APPLICATIONS
● HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHzABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) PD Power Dissipation 30W BVDSS Drain – Source Breakdown Voltage 70V BVGSS Gate – Source Breakdown Voltage ±20V ID(sat) Drain Current 5A Tstg Storage Temperature –65 to 150°C Tj Maximum Operating Junction Temperature 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice.