• Part: D1093UK
  • Description: METAL GATE RF SILICON FET
  • Manufacturer: Seme LAB
  • Size: 107.69 KB
Download D1093UK Datasheet PDF
Seme LAB
D1093UK
FEATURES - SIMPLIFIED AMPLIFIER DESIGN - SUITABLE FOR BROAD BAND APPLICATIONS DIM mm A 10.92 D 3.30 dia J 24.77 Tol. 0.25 0.08 0.08 0.13 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.13 0.08 0.05 MAX Inches 0.430 0.230 0.100 0.130 dia 0.360 0.120 0.079 0.041 0.725 0.975 0.108 0.360 0.165 0.005 0.280 Tol. 0.001 0.003 0.003 0.05 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.005 0.003 0.002 MAX - VERY LOW Crss - SIMPLE BIAS CIRCUITS - LOW NOISE - HIGH GAIN - 13 d B MINIMUM APPLICATIONS - HF/VHF/UHF MUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Power Dissipation 42W BVDSS Drain - Source Breakdown Voltage - 65V BVGSS Gate - Source Breakdown Voltage - ±20V ID(sat) Drain Current - 4A Tstg Storage Temperature - 65 to...