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D1210 - METAL GATE RF SILICON FET

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Datasheet Details

Part number D1210
Manufacturer Seme LAB
File Size 16.90 KB
Description METAL GATE RF SILICON FET
Datasheet download datasheet D1210 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SHINDENGEN Schottky Rectifiers (SBD) Modules D120SC4M 40V 120A FEATURES OUTLINE DIMENSIONS Case : Modules Unit : mm •œ High capacity modules •œ Low VF •œ Small ƒÆ jc APPLICATION •œ Big switching power supply •œ DC/DC converter •œ Mainframe •œ IC tester RATINGS •œAbsolute Maximum Ratings• @ (If not specified Tc=25•Ž•j Item Symbol Conditions RatingsUnits Storage Temperature Tstg -40•`125 •Ž Tj 125 •Ž Operating Junction Temperature Maximum Reverse Voltage V 40 V RM V 48 V Repetitive Peak Surge Reverse RRSM Voltage Pulse width 100ms, duty 1/100 I Average Rectified Forward Current 120 A O 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=90•Ž IFSM 800of per A diode Tj= Peak Surge Forward Current 50Hz sine wave, Non-repetitive 1cycle peak value, Rating TOR 1.