• Part: D2008UK
  • Description: METAL GATE RF SILICON FET
  • Manufacturer: Seme LAB
  • Size: 27.79 KB
Download D2008UK Datasheet PDF
Seme LAB
D2008UK
FEATURES - SIMPLIFIED AMPLIFIER DESIGN - SUITABLE FOR BROAD BAND APPLICATIONS - LOW Crss - SIMPLE BIAS CIRCUITS - LOW NOISE - HIGH GAIN - 13 d B MINIMUM 45˚ TO-39 PACKAGE PIN1 - DRAIN PIN2 - GATE PIN3 - SOURCE APPLICATIONS - VHF MUNICATIONS from DC to 400MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Power Dissipation 14W BVDSS Drain - Source Breakdown Voltage 65V BVGSS Gate - Source Breakdown Voltage ±20V ID(sat) Drain Current 2A Tstg Storage Temperature - 65 to 150°C Tj Maximum Operating Junction Temperature 200°C Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455)...