Seme LAB D2008UK
METAL GATE RF SILICON FET
| Part No. | D2008UK |
|---|---|
| Datasheet | D2008UK Download |
| Manufacturer |  Seme LAB |
| Description | METAL GATE RF SILICON FET |
| Buy | Stock & Price |
MECHANICAL DATA
8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 5.08 (0.200) typ. 2 13 2.54 (0.100) GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 400MHz SINGLE ENDEDFEATURES
● SIMPLIFIED AMPLIFIER DESIGN● SUITABLE FOR BROAD BAND
APPLICATIONS
● LOW Crss● SIMPLE BIAS CIRCUITS
● LOW NOISE
● HIGH GAIN – 13 dB MINIMUM 45˚ TO-39 PACKAGE PIN1 – DRAIN PIN2 – GATE PIN3 – SOURCE
APPLICATIONS
● VHF COMMUNICATIONS from DC to 400MHzABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) PD Power Dissipation 14W BVDSS Drain – Source Breakdown Voltage 65V BVGSS Gate – Source Breakdown Voltage ±20V ID(sat) Drain Current 2A Tstg Storage Temperature –65 to 150°C Tj Maximum Operating Junction Temperature 200°C Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Document 9839 Issue 1 D2008UKELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.