• Part: D2010UK
  • Description: METAL GATE RF SILICON FET
  • Manufacturer: Seme LAB
  • Size: 15.43 KB
Download D2010UK Datasheet PDF
Seme LAB
D2010UK
FEATURES - SIMPLIFIED AMPLIFIER DESIGN - SUITABLE FOR BROAD BAND APPLICATIONS - LOW Crss - SIMPLE BIAS CIRCUITS PIN 1 PIN 3 SOURCE GATE PIN 2 DRAIN DIM mm A 16.51 B 6.35 C 45° D 3.30 E 18.92 F 1.52 G 2.16 H 14.22 I 1.52 J 6.35 K 0.13 M 5.08 N 1.27 x 45° Tol. 0.25 0.13 5° 0.13 0.08 0.13 0.13 0.08 0.13 0.13 0.03 0.51 0.13 Inches 0.650 0.250 45° 0.130 0.745 0.060 0.085 0.560 0.060 0.250 0.005 0.200 0.050 x 45° Tol. 0.010 0.005 5° 0.005 0.003 0.005 0.005 0.003 0.005 0.005 0.001 0.020 0.005 - LOW NOISE - HIGH GAIN - 10 d B MINIMUM APPLICATIONS - VHF/UHF MUNICATIONS from 50 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 83W 65V ±20V 8A - 65 to 150°C 200°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk...