D5028UK Datasheet | Seme LAB

FEATURES - SIMPLIFIED AMPLIFIER DESIGN - SUITABLE FOR BROAD BAND APPLICATIONS DRAIN 1 GATE 2 PIN 1 PIN 3 PIN 5 SOURCE (MON) DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N O P Millimetres 19.05 10.77 45° 9.78 5.71 27.94 1.52R 10.16 22.22 0.13 2.72 1.70 5.08 34.03 1.61R Tol. 0.50 0.13 5° 0.13 0.13 0.13 0.13 0.13 MAX 0.02 0.13 0.13 0.50 0.13 0.08 PIN 2 PIN 4 - LOW Crss - SIMPLE BIAS CIRCUITS Inches 0.75 0.424 45° 0.385 0.225 1.100 0.060R 0.400 0.875 0.005 0.107 0.067 0.200 1.340 0.064R Tol. 0.020 0.005 5° 0.005 0.005 0.005 0.005 0.005 MAX 0.001 0.005 0.005 0.020 0.005 0.003 - LOW NOISE - HIGH GAIN - 13 d B MINIMUM APPLICATIONS - VHF/UHF MUNICATIONS from 1 MHz to 200 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj - Per Side Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Power Dissipation Drain - Source Breakdown Voltage- Gate - Source Breakdown Voltage- Drain Current- Storage Temperature Maximum Operating Junction Temperature 438W 125V ±20V 18A - 65 to 150°C 200°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://.semelab.co.uk Document Number 3140 Issue 1 .. ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. PER SIDE BVDSS IDSS IGSS VGS(th) gfs Drain- Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage- Forward Transconductance- Gate Threshold Voltage Matching Between Sides VGS = 0 VDS = 50V VGS = 20V ID = 10m A VDS = 10V ID = 10m A ID = 100m A VGS = 0 VDS = 0 VDS = VGS ID = 3A...