• Part: DMD1006-A
  • Description: METAL GATE RF SILICON FET
  • Manufacturer: Seme LAB
  • Size: 90.16 KB
Download DMD1006-A Datasheet PDF
Seme LAB
DMD1006-A
FEATURES - SUITABLE FOR BROAD BAND APPLICATIONS - SIMPLE BIAS CIRCUITS - ULTRA-LOW THERMAL RESISTANCE - Be O FREE - LOW Crss - HIGH GAIN - 15 d B MINIMUM APPLICATIONS - HF/VHF/UHF MUNICATIONS from 1 MHz to 200 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Power Dissipation 438W (219W -A Version) BVDSS Drain - Source Breakdown Voltage 70V BVGSS Gate - Source Breakdown Voltage ±20V ID(sat) Drain Current 30A Tstg Storage Temperature - 65 to 150°C Tj Maximum Operating Junction Temperature 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax...