• Part: DMD1010-A
  • Description: METAL GATE RF SILICON FET
  • Manufacturer: Seme LAB
  • Size: 81.42 KB
Download DMD1010-A Datasheet PDF
Seme LAB
DMD1010-A
FEATURES - SUITABLE FOR BROAD BAND APPLICATIONS - SIMPLE BIAS CIRCUITS - ULTRA-LOW THERMAL RESISTANCE - Be O FREE - LOW Crss - HIGH GAIN - 13 d B MINIMUM APPLICATIONS - VHF/UHF MUNICATIONS from 1 MHz to 500 MHz PD BVDSS BVGSS ID(sat) Tstg Tj - Per Side Power Dissipation Drain - Source Breakdown Voltage - Gate - Source Breakdown Voltage- Drain Current- Storage Temperature Maximum Operating Junction Temperature 648W (389W -A Version) 70V ±20V 20A - 65 to 150°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://.semelab.co.uk...