IRF130SMD Datasheet PDF

MECHANICAL DATA

Dimensions in mm (inches) 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .6 0 (0 .1 4 2 ) M a x . 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) N–CHANNEL POWER MOSFET FOR HI–REL

APPLICATIONS

VDSS ID(cont) RDS(on)

FEATURES

! 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 100V 11A 0.19W 0 .7 6 (0 .0 3 0 ) m in . 9 .6 7 (0 .3 8 1 ) 9 .3 8 (0 .3 6 9 ) 1 1 .5 8 (0 .4 5 6 ) 1 1 .2 8 (0 .4 4 4 ) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 )
● HERMETICALLY SEALED
● SIMPLE DRIVE REQUIREMENTS SMD 1 Pad 1 – Gate Pad 2 – Drain Pad 3 – Source
● LIGHTWEIGHT
● SCREENING OPTIONS AVAILABLE
● ALL LEADS ISOLATED FROM CASE

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg RqJC Gate – Source Voltage Continuous Drain Current @ Tcase = 25°C Continuous Drain Current @ Tcase = 100°C Pulsed Drain Current Power Dissipation @ Tcase = 25°C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case ±20V 11A 7A 44A 45W 0.36W/°C –55 to 150°C 2.8°C/W max.