Seme LAB IRF230
N-Channel Power MOSFET
| Part No. | IRF230 |
|---|---|
| Datasheet | IRF230 Download |
| Manufacturer |  Seme LAB |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VDS VDGR ID ID IDM VGS PD ILM EAS* TJ , TSTG TL Drain – Source Voltage1 Drain - Gate Voltage (RGS = 20KW)1 Continuous Drain Current@ Tcase = 25°C Continuous Drain Current@ Tcase = 100°C Pulsed Drain Current 3 Gate – Source Voltage Maximum Power Dissipation @ Tcase = 25°C Derate Linearly Inductive Current Clamped Single Pulse Avalanche energy Rating 4 200 200 9.0 6.0 36 ±20 75 0.6 36 150 –55 to 150 300 V V A A A V W W/°C A mj °C °C Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. THERMAL CHARACTERISTICS Characteristic RqJC RqCS RqJA NOTES 1 TJ = +25°C to + 150°C 2 Pulse Test PUlse Width # 300ms. Duty Cycle # 2% 3 Repetitive Ration Pulse Width Limited by Maximum Junction Temperature. 4 VDD = 20V starting TJ = +25°C , L = 3.37mH, RGS = 50W, IPEAK = 9A Junction to Case Case to Sink (Mounting Surface flat, smooth and greased. Junction to Ambient (Free air operation) 0.1 30 Min. Typ.