Datasheet4U Logo Datasheet4U.com

IRF9130 - P-Channel Power MOSFET

Key Features

  • 1 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 2.
  • 100V.
  • 11A 0.2W 20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.52 (0.060).

📥 Download Datasheet

Datasheet Details

Part number IRF9130
Manufacturer Seme LAB
File Size 19.16 KB
Description P-Channel Power MOSFET
Datasheet download datasheet IRF9130 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF9130 P-Channel Power MOSFET Samsung semiconductor
IRF9130 P-Channel Power MOSFET Intersil Corporation
IRF9130 P-Channel Power MOSFET International Rectifier
IRF9131 P-Channel Power MOSFET Samsung semiconductor
IRF9132 P-Channel Power MOSFET Samsung semiconductor

Other Datasheets by Seme LAB

Part Number Description
IRF9130SMD P-Channel Power MOSFET
IRF9140 P-Channel Power MOSFET
IRF9230 P-Channel Power MOSFET
IRF9240 P-Channel Power MOSFET
IRF9240-SMD P-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRF9130 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) P–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES 1 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 2 –100V –11A 0.2W 20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.52 (0.060) • HERMETICALLY SEALED TO–3 METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE 1.09 (0.043) 0.97 (0.038) dia. 2 plcs. TO–3 Metal Package Pin 1 – Gate Pin 2 – Source Case – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS IAR EAR dv/dt TJ , Tstg TL Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 12.07 (0.