Seme LAB IRF9140
P-Channel Power MOSFET
| Part No. | IRF9140 |
|---|---|
| Datasheet | IRF9140 Download |
| Manufacturer |  Seme LAB |
| Description | P-Channel Power MOSFET |
| Buy | Stock & Price |
MECHANICAL DATA
Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) P–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on)FEATURES
● HERMETICALLY SEALED TO–3 METAL PACKAGE 1 20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.52 (0.060) 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 2 –100V –18A 0.2Ω● SIMPLE DRIVE REQUIREMENTS
● SCREENING OPTIONS AVAILABLE 1.09 (0.043) 0.97 (0.038) dia. 2 plcs. TO–3 Metal Package Pin 1 – Gate Pin 2 – Source Case – Drain
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS IAR EAR dv/dt TJ , Tstg TL Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 12.07 (0.475) 11.30 (0.445) ±20V (VGS = 0 , Tcase = 25°C) (VGS = 0 , Tcase = 100°C) –18A –11A –72A 125W 1W/°C 2 Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current 2 500mJ –18A 12.5mJ –5.5V/ns –55 to +150°C 300°C Repetitive Avalanche Energy 2 Peak Diode Recovery 3 Operating and Storage Temperature Range Lead Temperature 1.6mm (0.