IRFE110
FEATURES
- SURFACE MOUNT
- SMALL FOOTPRINT
- HERMETICALLY SEALED
- DYNAMIC dv/dt RATING
- AVALANCHE ENERGY RATING
- SIMPLE DRIVE REQUIREMENTS
- LIGHTWEIGHT
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
Gate
- Source Voltage
±20V
Continuous Drain Current
(VGS = 10V , Tcase = 25°C)
3.5A
Continuous Drain Current
(VGS = 10V , Tcase = 100°C)
2.25A
Pulsed Drain Current 1
14A
Power Dissipation @ Tcase = 25°C
15W
Linear Derating Factor
0.09W/°C
EAS dv/dt
Single Pulse Avalanche Energy 2 Peak Diode Recovery 3
7.0m J 9.0V/ns
TJ , Tstg
Operating and Storage Temperature Range Surface Temperature ( for 5 sec).
-55 to +150°C 300°C
Notes
1) Pulse Test: Pulse Width ≤ 300μs, δ ≤ 2%
2) @ VDD = 25V , Peak IL = 3.1A , Starting TJ = 25°C 3) @ ISD ≤ 3.1A , di/dt ≤ 75A/μs , VDD ≤ BVDSS , TJ ≤ 150°C , Suggested RG = 7.5Ω
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information...
