• Part: IRFN150SMD
  • Description: N-CHANNEL POWER MOSFET
  • Category: MOSFET
  • Manufacturer: Seme LAB
  • Size: 55.69 KB
Download IRFN150SMD Datasheet PDF
Seme LAB
IRFN150SMD
IRFN150SMD is N-CHANNEL POWER MOSFET manufactured by Seme LAB.
FEATURES 100V 19A 0.070W 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) - HERMETICALLY SEALED SURFACE MOUNT PACKAGE - SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE. 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) - SIMPLE DRIVE REQUIREMENTS - LIGHTWEIGHT - HIGH PACKING DENSITIES SMD1 Pad 1 - Source Pad 2 - Drain Pad 3 - Gate Note: IRFxxx SM also available with pins 1 and 3 reversed. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS dv/dt TJ , Tstg TL Rq JC Rq J- PCB Gate - Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy Peak Diode Recovery 3 Operating and Storage Temperature Range Package Mounting Surface Temperature (for 5 sec) Thermal Resistance Junction to Case Thermal Resistance Junction to PCB (Typical) ±20V (VGS = 0 , Tcase = 25°C) (VGS = 0 , Tcase = 100°C) 27A 19A 108A 100W 0.8W/°C 150m J 5.5V/ns - 55 to 150°C 300°C 1.25°C/W 3°C/W Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) @ VDD = 25V , L ³ 0.3m H , RG = 25W , Peak IL = 27A , Starting TJ = 25°C 3) @ ISD £ 27A , di/dt £ 70A/ms , VDD £ BVDSS , TJ £ 150°C , SUGGESTED RG = 2.35W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://.semelab.co.uk Prelim.7/00 .. ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter BVDSS STATIC ELECTRICAL RATINGS Drain - Source Breakdown...