IRFN340SMD Datasheet | Seme LAB

FEATURES 400V 10A 0.55W 0 .7 6 (0 .0 3 0 ) m in . 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) - HERMETICALLY SEALED SURFACE MOUNT PACKAGE - SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE. - SIMPLE DRIVE REQUIREMENTS 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) - LIGHTWEIGHT - HIGH PACKING DENSITIES SMD1 PACKAGE Pad 1 - Source Pad 2 - Drain Pad 3 - Gate Note: IRFxxx SM also available with pins 1 and 3 reversed. ±20V 10A 6A 40A 125W 1.0W/°C 650m J 10A 12.5m J 4.0V/ns - 55 to 150°C 300°C 1.0°C/W TBD ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS IAR EAR dv/dt TJ , Tstg TL Rq JC Rq J- PCB Notes 1) 2) 2) 3) 4) Gate - Source Voltage Continuous Drain Current (VGS = 0 , Tcase = 25°C) Continuous Drain Current (VGS = 0 , Tcase = 100°C) 1 Pulsed Drain Current Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy 2 Avalanche Energy 1 Repetitive Avalanche Energy 1 Peak Diode Recovery 3 Operating and Storage Temperature Range Package Mounting Surface Temperature (for 5 sec) Thermal Resistance Junction to Case Thermal Resistance Junction to PCB (Typical) Repetitive Rating - Pulse width limited by maximum junction temperature. @ VDD = 50V,Starting TJ = 25°C, EAS =[0.5 - L- (IL2) - [BVDSS/(BVDSS-VDD)], Peak IL = 10A VGS = 10V, 25 £ RG £ 200W ISD £ 10A , di/dt £ 120A/ms , VDD £ BVDSS , TJ £ 150°C Pulse Test: Pulse Width £ 300ms, d £ 2% Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://.semelab.co.uk Prelim. 7/00 Semelab plc. .. ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise stated) Parameter...