Seme LAB IRFY430M
N-Channel MOSFET
| Part No. | IRFY430M |
|---|---|
| Datasheet | IRFY430M Download |
| Manufacturer |  Seme LAB |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
MECHANICAL DATA
Dimensions in mm (inches) 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 10.41 10.92 10.41 10.67 N–CHANNEL POWER MOSFET FOR HI–RELAPPLICATIONS
VDSS ID(cont) RDS(on) 0.89 1.14 16.38 16.89 13.39 13.64 1 2 3 12.70 19.05 500V 3.7A 1.6W 2.54 BSC 2.65 2.75FEATURES
● HERMETICALLY SEALED TO–220 METAL PACKAGE● SIMPLE DRIVE REQUIREMENTS
● LIGHTWEIGHT TO–220M – Metal Package IRFY430 Pin 1 – Gate Pin 2 – Drain Pin 3 – Source
● SCREENING OPTIONS AVAILABLE
● ALL LEADS ISOLATED FROM CASE IRFY430M Pin 1 – Drain Pin 2 – Source Pin 3 – Gate
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg TL RqJC Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25°C Linear Derating Factor Operating and Storage Temperature Range Package Mounting Surface Temperature (for 5 sec) Thermal Resistance Junction to Case (VGS = 0 , Tcase = 25°C) (VGS = 0 , Tcase = 100°C) ±20V 3.7A 2.4A 14A 45W 0.36W/°C –55 to 150°C 300°C 1.67°C/W max.