Seme LAB IRFY9140C
P-Channel MOSFET
MECHANICAL DATA
Dimensions in mm (inches) 10.41 (0.410) 10.67 (0.420) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) P–CHANNEL POWER MOSFET FOR HI–RELAPPLICATIONS
VDSS ID(cont) RDS(on)FEATURES
16.38 (0.645) 16.89 (0.665) 13.38 (0.527) 13.64 (0.537) 3.56 (0.140) Dia. 3.81 (0.150) 1 2 3 12.07 (0.500) 19.05 (0.750) -100V -12A 0.21Ω 10.41 (0.410) 10.92 (0.430) 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) BSC 3.05 (0.120) BSC● HERMETICALLY SEALED TO–257AA METAL PACKAGE
● SIMPLE DRIVE REQUIREMENTS
● LIGHTWEIGHT
● SCREENING OPTIONS AVAILABLE
● ALL LEADS ISOLATED FROM CASE TO–257AA – Metal Package Pad 1 – Gate Pad 2 – Drain Pad 3 – Source
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg RθJC RθJA Gate – Source Voltage Continuous Drain Current @ Tcase = 25°C Continuous Drain Current @ Tcase = 100°C Pulsed Drain Current Power Dissipation @ Tcase = 25°C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient ±20V -12A -8A -48A 60W 0.48W/°C –55 to 150°C 2.1°C/W max.