Seme LAB IRFY9230
P-CHANNEL POWER MOSFET
MECHANICAL DATA
Dimensions in mm (inches) 10.41 (0.410) 10.67 (0.420) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) P–CHANNEL POWER MOSFET FOR HI–RELAPPLICATIONS
VDSS ID(cont) RDS(on) – 16.38 (0.645) 16.89 (0.665) 13.38 (0.527) 13.64 (0.537) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 1 2 3 12.07 (0.500) 19.05 (0.750) 200V – 6.5A 0.80Ω 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) BSC 3.05 (0.120) BSCFEATURES
● HERMETICALLY SEALED TO–257AA METAL PACKAGE● SIMPLE DRIVE REQUIREMENTS
● LIGHTWEIGHT
● SCREENING OPTIONS AVAILABLE
● ALL LEADS ISOLATED FROM CASE TO–257AA – Metal Package Pad 1 – Gate Pad 2 – Drain Pad 3 – Source
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg RθJC Gate – Source Voltage Continuous Drain Current @ Tcase = 25°C Continuous Drain Current @ Tcase = 100°C Pulsed Drain Current Power Dissipation @ Tcase = 25°C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case ±20V - 6.5A - 4.0A - 28A 75W 0.6W/°C - 55 to 150°C 1.67°C/W max.