SML1001R3AN Description
1000 900 250 1000 ±100 Typ. Unit V BVDSS IDSS IGSS ID(ON) mA nA A V VGS(TH) Gate Threshold Voltage RDS(ON) W 1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
SML1001R3AN Datasheet
| Part Number | Description |
|---|---|
| SML1001R1AN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML1001RHN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML100A9 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML100B11 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML100B13 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
1000 900 250 1000 ±100 Typ. Unit V BVDSS IDSS IGSS ID(ON) mA nA A V VGS(TH) Gate Threshold Voltage RDS(ON) W 1) Repetitive Rating: Pulse Width limited by maximum junction temperature.