Seme LAB SML120J25
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
| Part No. | SML120J25 |
|---|---|
| Datasheet | SML120J25 Download |
| Manufacturer |  Seme LAB |
| Description | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source Voltage Gate – Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 2 1200 26 104 ±30 ±40 700 5.6 –55 to 150 300 26 50 3600 V A A V W W/°C °C A mJ 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25°C, L = 10.65mH, RG = 25Ω, Peak IL = 26A Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: E-mail: sales@semelab.co.uk 5/99 SML120J25 STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) BVDSS IDSS IGSS VGS(TH) ID(ON) RDS(ON) Characteristic Drain – Source Breakdown Voltage Zero Gate Voltag...