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SML20W65
TO–267 Package Outline.
Dimensions in mm (inches)
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
VDSS 200V 65A ID(cont) RDS(on) 0.026Ω
• Faster Switching • Lower Leakage • TO–267 Hermetic Package
D
StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout.
SML20W65 Datasheet
