SML40A26 datasheet by Seme LAB.
| Part number | SML40A26 |
|---|---|
| Datasheet | SML40A26_SemeLAB.pdf |
| File Size | 20.78 KB |
| Manufacturer | Seme LAB |
| Description | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
|
|
SML40A26 TO 3 Package Outline. G S StarMOS is a new generation of high voltage N Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance.
| Part Number | Description |
|---|---|
| SML40B27 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML40B28 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML40B37 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML40H22 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML40H28 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML40J53 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML40J93 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML40L57 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML010FBDH06 | SILICON CARBIDE POWER SCHOTTKY RECTIFIER DIODE BRIDGE |
| SML1001R1AN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
