SML60A18
SML60A18 is N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS manufactured by Seme LAB.
TO- 3 Package Outline.
Dimensions in mm (inches)
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
1.47 (0.058) 1.60 (0.063)
3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50)
VDSS 600V 17.5A ID(cont) RDS(on) 0.320Ω
- Faster Switching
- Lower Leakage
- TO- 3 Hermetic Package
38.61 (1.52) 39.12 (1.54)
29.9 (1.177) 30.4 (1.197)
Pin 1
- Gate
16.64 (0.655) 17.15 (0.675)
Pin 2
- Source
Case
- Drain
22.23 (0.875) max.
Star MOS is a new generation of high voltage N- Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. Star MOS also achieves faster switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain
- Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate
- Source Voltage Gate
- Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy
600 17.5 70 ±30 ±40 235 1.88
- 55 to 150 300 17.5 30 1300
V A A V W W/°C °C A m J
1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25°C, L = 8.49m H, RG = 25Ω, Peak IL = 17.5A
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://.semelab.co.uk E-mail: sales@semelab.co.uk
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STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise...
