SMP550G-EJ
SMP550G-EJ is P.I.N. PHOTODIODE manufactured by Seme LAB.
FEATURES
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- - EXCELLENT LINEARITY LOW NOISE WIDE SPECTRAL RESPONSE LOW LEAKAGE CURRENT LOW CAPACITANCE INTEGRAL OPTICAL FILTER OPTION note 1 TO39 HERMETIC METAL CAN PACKAGE EMI SCREENING MESH AVAILABLE
WINDOW Ø 5.9 ± 0.1
Ø 9.1 ± 0.2 Ø 8.1 ± 0.1
SENSITIVE SURFACE
Ø 0.45 LEAD 5.08 ± 0.2
3.8 ± 0.2
Note 1 Contact Semelab Plc for filter options
DESCRIPTION
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The SMP550G-EJ is a Silicon P.I.N. photodiode incorporated in a hermetic metal can package. The electrical terminations are via two leads of diameter 0.018" on a pitch of 0.2". The can structure permits a wide range of optical filter options. The cathode of the photodiode is electrically connected to the package. The larger photodiode active area provides greater sensitivity than the SMP400 range of devices, with a corresponding reduction in speed. The photodiode structure has been optimised for high sensitivity, light measurement applications. The metal can and optional screening mesh ensure a rugged device with a high degree of immunity to radiated electrical interference.
TO-39 Package
Pin 1
- Anode Pin 2
- Cathode & Case
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
Operating temperature range Storage temperature range Temperature coefficient of responsively Temperature coefficient of dark current Reverse breakdown voltage Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
-40°C to +70°C -45°C to +80°C 0.35% per °C x2 per 8°C rise 60V
Prelim. 1/98
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CHARACTERISTICS (Tamb=25°C unless otherwise stated) Characteristic Test Conditions.
Responsively Active Area Dark Current Breakdown Voltage Capacitance E = 0 Dark E = 0 Dark E = 0 Dark E = 0 Dark E = 0 Dark 30V Reverse 50Ω 900nm
Directional characteristics
Min.
Typ.
0.55 5.19
Max.
Units
A/W mm2
λ at 900nm
1V Reverse 10V Reverse 10µA Reverse 0V Reverse 20V Reverse 60
2 16 80 55 10 9 19x10-14
4 22 n A V p F
Rise Time NEP ns...