VP1008CSM4 Datasheet | Seme LAB

FEATURES - BVDSS =100V - ID = 300m A 0.23 min. (0.009) 0.64 ± 0.08 (0.025 ± 0.003) 0.23 rad. (0.009) 3 2 1.27 ± 0.05 (0.05 ± 0.002) 3.81 ± 0.13 (0.15 ± 0.005) - Hermetic Surface Mount Package - Screening Option Available 1.02 ± 0.20 (0.04 ± 0.008) 2.03 ± 0.20 (0.08 ± 0.008) .. LCC3 PACKAGE Underside View PAD 1 - Drain PAD 2 - N/C PAD 3 - Source PAD 4 - Gate The VP1008CSM4 is a general purpose P-Channel enhancement mode mosfet in a Ceramic Surface Mount package designed for high rel applications: ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VDS VGS ID IDM PD TSTG , TJ NOTE: 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. Drain - Source Voltage Gate - Source Voltage Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @TA = 25°C @TA = 100°C Maximum Junction and Storage Temperature Range @TA = 25°C @TA = 100°C 100V "30V 300m A 195m A 3A 400W 160W 150°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://.semelab.co.uk Prelim. 9/99 . . .. ELECTRICAL RATINGS (TA = 25°C unless otherwise stated) Characteristic BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gfs gos Ciss Coss Crss ton toff STATIC CHARACTERISTICS Drain - Source Breakdown Voltage Gate Threshold Voltage Gate - Source Leakage Current Zero Gate Voltage Drain Current On State Drain Current 1 Static Drain - Source On-State Resistance 1 Forward Transconductance 1 mon Source Output Conductance DYNAMIC CHARACTERISTICS Input capacitance Output capacitance Reverse transfer capacitance SWITCHING CHARACTERISTICS Turn- on Time Turn-off Time VDD = 15V ID = 0.6A VGEN = 10V VDS = -10V VDS = -7.5V VGS = 0V Test Conditions VGS = 0V VDS = VGS VGS = "20V VDS = -100V VDS = -15V VGS = 10V ID = -10m A ID = -1m A VGS = 0V TJ = 125°C VGS = 0V TJ = 125°C VGS = -10V ID = -1A TJ = 125°C ID = -0.5A ID = -0.1A -2 25 43 325 450 38 16 2 RL = 23W 60 25 5 p F 200 -11 5 8 Min. -110 -34 Typ. -100 -2 -45 "100 "500...