ZVN2106B
ZVN2106B is N-CHANNEL ENHANCEMENT MODE MOSFET manufactured by Seme LAB.
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335)
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
N- CHANNEL ENHANCEMENT MODE MOSFET VDSS 60V ID 1.2A RDS(on) 2.0Ω
Features
2.54 (0.100)
5.08 (0.200) typ.
2 1
0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034)
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Faster switching Low Ciss Integral Source-Drain Diode High Input Impedance and High Gain
DESCRIPTION
45°
TO-39 PACKAGE (TO-205AD)
(Underside View) PIN 1
- SOURCE PIN 3
- DRAIN CASE
- DRAIN PIN 2
- GATE
This enhancement-mode (normally-off) vertical DMOS FET is ideally suited to a wide range of switching and amplifying...
