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ZVN2106B - N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet Summary

Description

45° TO-39 PACKAGE (TO-205AD) (Underside View) PIN 1 SOURCE PIN 3 DRAIN CASE DRAIN PIN 2 GATE This enhancement-mode (normally-off) vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high

Features

  • 2.54 (0.100) 5.08 (0.200) typ. 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3.
  • Faster switching Low Ciss Integral Source-Drain Diode High Input Impedance and High Gain.

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Datasheet Details

Part number ZVN2106B
Manufacturer Seme LAB
File Size 119.10 KB
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet ZVN2106B Datasheet
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    Full PDF Text Transcription

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    ZVN2106B MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N–CHANNEL ENHANCEMENT MODE MOSFET VDSS 60V ID 1.2A RDS(on) 2.0Ω FEATURES 2.54 (0.100) 5.08 (0.200) typ. 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.
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