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ZVN2106B - N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

45° TO-39 PACKAGE (TO-205AD) (Underside View) PIN 1 SOURCE PIN 3 DRAIN CASE DRAIN PIN 2 GATE This enhancement-mode (normally-off) vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high

Key Features

  • 2.54 (0.100) 5.08 (0.200) typ. 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3.
  • Faster switching Low Ciss Integral Source-Drain Diode High Input Impedance and High Gain.

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Datasheet Details

Part number ZVN2106B
Manufacturer Seme LAB
File Size 119.10 KB
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet ZVN2106B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ZVN2106B MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N–CHANNEL ENHANCEMENT MODE MOSFET VDSS 60V ID 1.2A RDS(on) 2.0Ω FEATURES 2.54 (0.100) 5.08 (0.200) typ. 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.