Seme LAB ZVN2106B
This enhancement-mode (normally-off) vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.| Part No. | ZVN2106B |
|---|---|
| Datasheet | ZVN2106B Download |
| Manufacturer |  Seme LAB |
| Description | N-CHANNEL ENHANCEMENT MODE MOSFET |
| Buy | Stock & Price |
MECHANICAL DATA
Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N–CHANNEL ENHANCEMENT MODE MOSFET VDSS 60V ID 1.2A RDS(on) 2.0ΩFEATURES
2.54 (0.100) 5.08 (0.200) typ. 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3●
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● Faster switching Low Ciss Integral Source-Drain Diode High Input Impedance and High Gain
DESCRIPTION
45° TO-39 PACKAGE (TO-205AD) (Underside View) PIN 1 – SOURCE PIN 3 – DRAIN CASE – DRAIN PIN 2 – GATE High Reliability Screening options are available. CASEABSOLUTE MAXIMUM RATINGS
T VDS ID IDM VGS Ptot(1) Ptot(2) Tj,Tstg Drain - Source Voltage Drain Current Drain Current = 25°C unless otherwise stated 60V 1.2A 0.45A 8A ±20V 5W 0.040W/°C 700mW -55 to +150°C - Continuous (TC = 25°C) - Continuous (TA = 25°C) - Pulsed (Note 1) Gate - Source Voltage Total Power Dissipation at Tmb ≤ 25°C De-rate Linearly above 25°C Total Power Dissipation at...