Datasheet Summary
TetraFET
METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W
- 28V
- 400MHz SINGLE ENDED
Features
- SIMPLIFIED AMPLIFIER DESIGN
- SUITABLE FOR BROAD BAND APPLICATIONS
PIN 1 PIN 3 DRAIN GATE PIN 2 PIN 4 SOURCE SOURCE
- LOW Crss
- SIMPLE BIAS CIRCUITS
- LOW NOISE
- HIGH GAIN
- 13 dB MINIMUM
DIM A B C D E F G H mm 26.16 5.72 45° 7.11 0.13 1.52 0.43 7.67
Tol. 0.38 0.13 5° 0.13 0.03 0.13 0.20 REF
Inches 1.030 0.225 45° 0.280 0.005 0.055 0.060 0.120
Tol. 0.015 0.005 5° 0.005 0.001 0.005 0.008 REF
APPLICATIONS
- VHF/UHF MUNICATIONS from DC to...
