SemiHow HCA60R070F
600V N-Channel Super Junction MOSFET
| Part No. | HCA60R070F |
|---|---|
| Datasheet | HCA60R070F Download |
| Manufacturer |  SemiHow |
| Description | 600V N-Channel Super Junction MOSFET |
| Buy | Stock & Price |
FEATURES
● Very Low FOM (RDS(on) X Qg)● Extremely low switching loss
● Excellent stability and uniformity
● 100% Avalanche Tested
● Fast Recovery Time
KEY PARAMETERS
Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 42 70 106 Unit V A mΩ nC Application● Switch Mode Power Supply (SMPS)
● Uninterruptible Power Supply (UPS)
● Power Factor Correction (PFC)
● AC to DC Converters
● Telecom, Solar Package & Internal Circuit TO-247 SYMBOL GD S
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM1) EAS2) IAR dv/dt dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed Single Pulsed Avalanche Energy Avalanche Current MOSFET dv/dt ruggedness, VDS=0…400V Reverse diode dv/dt, VDS=0…400V, IDS≤ID Power Dissipation (TC = 25℃) Operating and Storage Temperature Range Value 600 ±20 42.0 26.6 126 807 4.1 50 15 272 -55 to +150 Unit V V A A A mJ A V/ns V/ns W ℃ Thermal Resistance Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case, Max.
