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HCD65R1K0 - 650V N-Channel Super Junction MOSFET

Key Features

  • Very Low FOM (RDS(on) X Qg).
  • Extremely low switching loss.
  • Excellent stability and uniformity.
  • 100% Avalanche Tested.
  • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 4.8 1.0 9.3 Unit V A Ω nC.

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Datasheet Details

Part number HCD65R1K0
Manufacturer SemiHow
File Size 359.04 KB
Description 650V N-Channel Super Junction MOSFET
Datasheet download datasheet HCD65R1K0 Datasheet

Full PDF Text Transcription for HCD65R1K0 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HCD65R1K0. For precise diagrams, and layout, please refer to the original PDF.

HCD65R1K0 June 2019 HCD65R1K0 650V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excellent stability and uniform...

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X Qg) • Extremely low switching loss • Excellent stability and uniformity • 100% Avalanche Tested • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 4.8 1.0 9.

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