SemiHow HCD65R360S
650V N-Channel Super Junction MOSFET
| Part No. | HCD65R360S |
|---|---|
| Datasheet | HCD65R360S Download |
| Manufacturer |  SemiHow |
| Description | 650V N-Channel Super Junction MOSFET |
| Buy | Stock & Price |
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 23 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7\S #9GS=10V 100% Avalanche Tested BVDSS = 650 V RDS(on) typ ȍ ID = 11 A D-PAK I-PAK 2 1 1 32 3 HCD65R360S HCU65R360S 1.Gate 2. Drain 3. SourceABSOLUTE MAXIMUM RATINGS
TC=25 unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25) – Continuous (TC = 100) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt 650 11 7 33 ρ20 300 3.0 0.6 15 Power Dissipation (TA = 25)* PD Power Dissipation (TC = 25) - Derate above 25 2.5 100 0.8 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temp...
