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HCD65R380 - 650V N-Channel Super Junction MOSFET

Key Features

  • Very Low FOM (RDS(on) X Qg).
  • Extremely low switching loss.
  • Excellent stability and uniformity.
  • 100% Avalanche Tested.
  • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 10.4 0.38 22.6 Unit V A Ω nC.

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Datasheet Details

Part number HCD65R380
Manufacturer SemiHow
File Size 249.68 KB
Description 650V N-Channel Super Junction MOSFET
Datasheet download datasheet HCD65R380 Datasheet

Full PDF Text Transcription for HCD65R380 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HCD65R380. For precise diagrams, and layout, please refer to the original PDF.

HCD65R380 August 2019 HCD65R380 650V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excellent stability and unifo...

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) X Qg) • Extremely low switching loss • Excellent stability and uniformity • 100% Avalanche Tested • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 10.4 0.38 22.

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