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HCD80R1K4 - 800V N-Channel Super Junction MOSFET

Features

  • Very Low FOM (RDS(on) X Qg).
  • Extremely low switching loss.
  • Excellent stability and uniformity.
  • 100% Avalanche Tested.
  • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 850 4.0 1.4 9.1 Unit V A Ω nC.

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Datasheet preview – HCD80R1K4

Datasheet Details

Part number HCD80R1K4
Manufacturer SemiHow
File Size 273.76 KB
Description 800V N-Channel Super Junction MOSFET
Datasheet download datasheet HCD80R1K4 Datasheet
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HCD80R1K4 Sep 2020 HCD80R1K4 800V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excellent stability and uniformity • 100% Avalanche Tested • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 850 4.0 1.4 9.
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