HCD80R670
Key Features
- Very Low FOM (RDS(on) X Qg)
- Extremely low switching loss
- Excellent stability and uniformity
- 100% Avalanche Tested
- Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 850 8 0.67 17.4 Unit V A Ω nC
