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HCD80R670 - 800V N-Channel Super Junction MOSFET

Features

  • Very Low FOM (RDS(on) X Qg).
  • Extremely low switching loss.
  • Excellent stability and uniformity.
  • 100% Avalanche Tested.
  • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 850 8 0.67 17.4 Unit V A Ω nC.

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Datasheet preview – HCD80R670

Datasheet Details

Part number HCD80R670
Manufacturer SemiHow
File Size 232.40 KB
Description 800V N-Channel Super Junction MOSFET
Datasheet download datasheet HCD80R670 Datasheet
Additional preview pages of the HCD80R670 datasheet.

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Full PDF Text Transcription

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HCD80R670 Dec 2019 HCD80R670 800V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excellent stability and uniformity • 100% Avalanche Tested • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 850 8 0.67 17.
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