HCFL65R130
Features
- Very Low FOM (RDS(on) X Qg)
- Extremely low switching loss
- Excellent stability and uniformity
- 100% Avalanche Tested
- Built-in ESD Diode
Key Parameters
Parameter BVDSS @Tj,max
ID RDS(on), max
Qg, Typ
Value 700 25.3 143 65
Unit V A mΩ n C
Application
- Switch Mode Power Supply (SMPS)
- Uninterruptible Power Supply (UPS)
- Power Factor Correction (PFC)
- AC to DC Converters
- Tele, Solar
Package & Internal Circuit
DFN8x8
SYMBOL
Pin1 : G
Pin2 : Driver Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol VDSS VGS
IDM1) EAS2) IAR dv/dt dv/dt PD VESD(G-S) TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current Drain Current Drain Current
- Continuous (TC = 25℃)
- Continuous (TC = 100℃)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
MOSFET dv/dt ruggedness, VDS=0…400V
Reverse diode dv/dt, VDS=0…400V, IDS≤ID Power Dissipation (TC = 25℃) Gate source ESD(HBM-C=100p F, R=1.5KΩ)
Operating and Storage...
