HCP60R750V - 600V N-Channel Super Junction MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested November 2014 BVDSS = 600 V RDS(on) typ = 0.67 ȍ ID = 7 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM V.

HCP60R750V 600v n-channel super junction mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HCP60R750V
Manufacturer	SemiHow
File Size	280.67 KB
Description	600V N-Channel Super Junction MOSFET
Datasheet	HCP60R750V Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
HCP602535ZC	Li-ion Polymer Rechargeable Battery	Honcell
HCP	Switchmode Power Supplies	Jianghai Europe GmbH
HCP10C60	Silicon Controlled Rectifier	ETC
HCP12C60	Silicon Controlled Rectifier	ETC
HCP20C60	Silicon Controlled Rectifier	SHANTOU HUASHAN ELECTRONIC DEVICES

Other Datasheets by SemiHow

Part Number	Description
HCP60R115	600V N-Channel Super Junction MOSFET
HCP65R360S	650V N-Channel Super Junction MOSFET
HCP65R600S	650V N-Channel Super Junction MOSFET
HCP12NK65V	N-Channel MOSFET
HCP20NT60V	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

HCP60R750V HCP60R750V 600V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested November 2014 BVDSS = 600 V RDS(on) typ = 0.67 ȍ ID = 7 A TO-220 1 23 1.Gate 2. Drain 3.