HCS55R140E Datasheet PDF

FEATURES

‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely low switching loss ‰ Excellent stability and uniformity ‰ 100% Avalanche Tested

KEY PARAMETERS

Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 600 23 0.14 22 Unit V A ȍ nC Application ‰ Lighting ‰ Hard Switching PWM ‰ Server Power Supply ‰ Charger Package & Internal Circuit TO-220F G D S

ABSOLUTE MAXIMUM RATINGS

TC=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS dv/dt dv/dt PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) MOSFET dv/dt ruggedness, VDS=0…400V Reverse diode dv/dt, VDS=0…400V, IDS”ID Power Dissipation Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” fr