SemiHow HCS60R099ST
600V N-Channel Super Junction MOSFET
| Part No. | HCS60R099ST |
|---|---|
| Datasheet | HCS60R099ST Download |
| Manufacturer |  SemiHow |
| Description | 600V N-Channel Super Junction MOSFET |
| Buy | Stock & Price |
FEATURES
● Very Low FOM (RDS(on) X Qg)● Extremely low switching loss
● Excellent stability and uniformity
● 100% Avalanche Tested
● Built-in ESD Diode
KEY PARAMETERS
Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 30.7 99 75 Unit V A mΩ nC Application● Switch Mode Power Supply (SMPS)
● Uninterruptible Power Supply (UPS)
● Power Factor Correction (PFC)
● AC to DC Converters
● Telecom, Solar Package & Internal Circuit TO-220FT SYMBOL G D S
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol Parameter VDSS VGS ID IDM1) EAS2) IAR dv/dt Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC = 25℃) Drain Current - Continuous (TC = 100℃) Drain Current - Pulsed Single Pulsed Avalanche Energy Avalanche Current MOSFET dv/dt ruggedness, VDS=0…400V dv/dt PD VESD(G-S) TJ, TSTG Reverse diode dv/dt, VDS=0…400V, IDS≤ID Power Dissipation (TC = 25℃) Gate source ESD(HBM-C=100pF, R=1.5KΩ) Operating and Storage Temperature Range * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case, Max.
