HCS60R150T - 600V N-Channel Super Junction MOSFET

SemiHow

Key Features

Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 22 0.15 41 Unit V A ȍ nC.

HCS60R150T 600v n-channel super junction mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HCS60R150T
Manufacturer	SemiHow
File Size	259.57 KB
Description	600V N-Channel Super Junction MOSFET
Datasheet	HCS60R150T Datasheet

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HCS60R150T Super Junction MOSFET Jan 2016 HCS60R150T 600V N-Channel Super Junction MOSFET Features Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 22 0.