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HCS60R190ST - 600V N-Channel Super Junction MOSFET

Key Features

  • Very Low FOM (RDS(on) X Qg).
  • Extremely low switching loss.
  • Excellent stability and uniformity.
  • 100% Avalanche Tested.
  • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 17.6 0.19 40 Unit V A Ω nC.

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Datasheet Details

Part number HCS60R190ST
Manufacturer SemiHow
File Size 245.46 KB
Description 600V N-Channel Super Junction MOSFET
Datasheet download datasheet HCS60R190ST Datasheet

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HCS60R190ST June 2019 HCS60R190ST 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excellent stability and uniformity • 100% Avalanche Tested • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 17.6 0.