SemiHow HCS60R350T
600V N-Channel Super Junction MOSFET
FEATURES
Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedKEY PARAMETERS
Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 11 0.35 17.5 Unit V A ȍ nC Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) TV power & LED Lighting Power Package & Internal Circuit TO-220F G D SABSOLUTE MAXIMUM RATINGS
TJ=25 unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25) – Continuous (TC = 100) – Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Power Dissipation (TC = 25) Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case fo