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HCS65R180S - N-Channel Super Junction MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 46 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested March 2015 BVDSS = 650 V RDS(on) typ = 0.15 ȍ ID = 20 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VG.

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Datasheet Details

Part number HCS65R180S
Manufacturer SemiHow
File Size 285.75 KB
Description N-Channel Super Junction MOSFET
Datasheet download datasheet HCS65R180S Datasheet
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HCS65R180S HCS65R180S 650V N-Channel Super Junction MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 46 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested March 2015 BVDSS = 650 V RDS(on) typ = 0.15 ȍ ID = 20 A TO-220F 12 3 1.Gate 2. Drain 3.
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