SemiHow HCS65R180S
N-Channel Super Junction MOSFET
| Part No. | HCS65R180S |
|---|---|
| Datasheet | HCS65R180S Download |
| Manufacturer |  SemiHow |
| Description | N-Channel Super Junction MOSFET |
| Buy | Stock & Price |
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 46 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7\S #9GS=10V 100% Avalanche Tested March 2015 BVDSS = 650 V RDS(on) typ = 0.15 ȍ ID = 20 A TO-220F 12 3 1.Gate 2. Drain 3. SourceABSOLUTE MAXIMUM RATINGS
TC=25 unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25) – Continuous (TC = 100) – Pulsed (Note 1) Gate-Source Voltage Static AC (f>1 Hz) 650 20 * 10 * 60 * ρ20 ρ30 EAS IAR EAR dv/dt Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 2) (Note 1) (Note 1) 710 20 1 15 PD Power Dissipation (TC = 25) - Derate above 25 45 0.36 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering...
