HCS65R660S Datasheet N-Channel Super Junction MOSFET

Manufacturer: SemiHow

Datasheet Details

Part number	HCS65R660S
Manufacturer	SemiHow
File Size	183.47 KB
Description	N-Channel Super Junction MOSFET
Download	HCS65R660S Download (PDF)

HCS65R660S HCS65R660S 650V N-Channel Super Junction MOSFET.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested November 2014 BVDSS = 650 V RDS(on) typ ȍ ID = 6.2 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM.

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