HCS65R660S - N-Channel Super Junction MOSFET

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SemiHow

Part number	HCS65R660S
Manufacturer	SemiHow
File Size	183.47 KB
Description	N-Channel Super Junction MOSFET
Datasheet	HCS65R660S Datasheet
Additional preview pages of the HCS65R660S datasheet.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested November 2014 BVDSS = 650 V RDS(on) typ ȍ ID = 6.2 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM.

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Published: Apr 8, 2016 |