SemiHow HCS70R660S
N-Channel Super Junction MOSFET
| Part No. | HCS70R660S |
|---|---|
| Datasheet | HCS70R660S Download |
| Manufacturer |  SemiHow |
| Description | N-Channel Super Junction MOSFET |
| Buy | Stock & Price |
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7\S #9GS=10V 100% Avalanche Tested Jan 2015 BVDSS = 700 V RDS(on) typ ȍ ID = 6.2 A TO-220F 12 3 1.Gate 2. Drain 3. SourceABSOLUTE MAXIMUM RATINGS
TC=25 unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25) – Continuous (TC = 100) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt 700 6.2 * 3.5 * 18 * ρ20 100 2 1 15 PD Power Dissipation (TC = 25) - Derate above 25 29 0.23 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for...
