HCS80R850S
Features
- Very Low FOM (RDS(on) X Qg)
- Extremely low switching loss
- Excellent stability and uniformity
- 100% Avalanche Tested
- Built-in ESD Diode
Key Parameters
Parameter BVDSS @Tj,max
ID RDS(on), max
Qg, Typ
Value 850 6.6 0.85 13.7
Unit V A Ω n C
Application
- Switch Mode Power Supply (SMPS)
- TV power & LED Lighting Power
- AC to DC Converters
- Tele
Package & Internal Circuit
TO-220FS
SYMBOL
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
VDSS VGS
IDM1) EAS2) IAR dv/dt
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous (TC = 25℃)
Drain Current
- Continuous (TC = 100℃)
Drain Current
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
MOSFET dv/dt ruggedness, VDS=0…400V dv/dt PD TJ, TSTG
Reverse diode dv/dt, VDS=0…400V, IDS≤ID Power Dissipation (TC = 25℃) Operating and Storage Temperature Range
- Drain current limited by maximum junction...
