SemiHow HCS80R850S
800V N-Channel Super Junction MOSFET
| Part No. | HCS80R850S |
|---|---|
| Datasheet | HCS80R850S Download |
| Manufacturer |  SemiHow |
| Description | 800V N-Channel Super Junction MOSFET |
| Buy | Stock & Price |
FEATURES
● Very Low FOM (RDS(on) X Qg)● Extremely low switching loss
● Excellent stability and uniformity
● 100% Avalanche Tested
● Built-in ESD Diode
KEY PARAMETERS
Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 850 6.6 0.85 13.7 Unit V A Ω nC Application● Switch Mode Power Supply (SMPS)
● TV power & LED Lighting Power
● AC to DC Converters
● Telecom Package & Internal Circuit TO-220FS SYMBOL G D S
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol Parameter VDSS VGS ID IDM1) EAS2) IAR dv/dt Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC = 25℃) Drain Current - Continuous (TC = 100℃) Drain Current - Pulsed Single Pulsed Avalanche Energy Avalanche Current MOSFET dv/dt ruggedness, VDS=0…400V dv/dt PD TJ, TSTG Reverse diode dv/dt, VDS=0…400V, IDS≤ID Power Dissipation (TC = 25℃) Operating and Storage Temperature Range * Drain current limited by maximum junction temperature Value 800 ±20 6.6 * 4.2 * 19.8 * 56 1.15 50 15 27 -55 to +150 Unit V V A A A mJ A V/ns V/ns W ℃ Thermal Resistance Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case, Max.
