HCU65R600S Datasheet 650V N-Channel Super Junction MOSFET

Manufacturer: SemiHow

Datasheet Details

Part number	HCU65R600S
Manufacturer	SemiHow
File Size	263.62 KB
Description	650V N-Channel Super Junction MOSFET
Download	HCU65R600S Download (PDF)

HCD65R600S_HCU65R600S June 2015 HCD65R600S / HCU65R600S 650V N-Channel Super Junction.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested BVDSS = 650 V RDS(on) typ = 0.54 ȍ ID = 7.3 A D-PAK I-PAK 2 1 1 32 3 HCD65R600S HCU65R600S 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter.

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