HCU65R660S
HCU65R660S is 650V N-Channel Super Junction MOSFET manufactured by SemiHow.
HCD65R660S_HCU65R660S
June 2015
HCD65R660S / HCU65R660S
650V N-Channel Super Junction MOSFET
Features
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested
BVDSS = 650 V
RDS(on) typ = 0.6 ȍ
ID = 6.2 A
D-PAK I-PAK
1 1
32 3
HCD65R660S HCU65R660S 1.Gate 2. Drain 3....
