SemiHow HCU70R1K4P
700V N-Channel Super Junction MOSFET
| Part No. | HCU70R1K4P |
|---|---|
| Datasheet | HCU70R1K4P Download |
| Manufacturer |  SemiHow |
| Description | 700V N-Channel Super Junction MOSFET |
| Buy | Stock & Price |
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.15 ȍ (Typ.) @VGS=10V 100% Avalanche Tested Jan 2015 BVDSS = 700 V RDS(on)Typ ȍ ID = 4.0 A I-PAK 1 2 3 1.Gate 2. Drain 3. SourceABSOLUTE MAXIMUM RATINGS
TC=25 unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25) – Continuous (TC = 100) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt 700 4.0 2.8 12.0 ρ30 130 2.0 0.2 50 PD TJ, TSTG TL Power Dissipation (TC = 25) Operating
