SemiHow HCU70R1K5E
700V N-Channel Super Junction MOSFET
FEATURES
Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedKEY PARAMETERS
Parameter BVDSS @Tj,max ID RDS(on), Typ Qg, Typ Value 750 4 1.3 5.5 Unit V A ȍ nC Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) TV power & LED Lighting Power Package & Internal Circuit I-PAK TO-251A TO-251A (S/L) TO-251B (S/L) GDS GDS GDSABSOLUTE MAXIMUM RATINGS
TC=25 unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25) – Continuous (TC = 100) – Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Power Dissipation (TC = 25) Operating and Storage Temperature Range Maximum lead temperature